Vishay Intertechnology has introduced a150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package ...

GlobalFoundries and the US Department of Commerce have announced an award of up to $1.5 billion in direct funding to GF ...

Toshiba Electronics Europe has introduced a new gate driver IC series for three-phase brushless DC (BLDC) motors used in ...

Mitsubishi Electric will invest approximately $64m (10 billion yen) to construct a new facility for the assembly and ...

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

STMicroelectronics has introduced 40V STripFET F8 MOSFETs with standard threshold voltage (VGS (th)), combining the ...

Infineon has announced the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS (on) ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

Mitsubishi Electric will shortly begin shipping samples of a SiC MOSFET bare die for use in drive-motor inverters of electric ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, has opened its North American ...

This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo ...

At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC substrate.