Vishay Intertechnology has introduced a150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package ...

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

STMicroelectronics has introduced 40V STripFET F8 MOSFETs with standard threshold voltage (VGS (th)), combining the ...

GlobalFoundries and the US Department of Commerce have announced an award of up to $1.5 billion in direct funding to GF ...

Ghislain Despesse, Research Director at CEA-Leti, explains how, building on its earlier breakthroughs introducing a new way ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

Toshiba Electronics Europe has introduced a new gate driver IC series for three-phase brushless DC (BLDC) motors used in ...

Mitsubishi Electric will invest approximately $64m (10 billion yen) to construct a new facility for the assembly and ...

Infineon has announced the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS (on) ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the ...

The automotive semiconductor market is expecting a CAGR of 11 percent between 2023 and 2029 to almost $100 billion at the end ...

Mitsubishi Electric will shortly begin shipping samples of a SiC MOSFET bare die for use in drive-motor inverters of electric ...